A2G26H281-04S|Airfast RF Power GaN Transistor | NXP Semiconductors

2496-2690 MHz, 50 W Avg., 48 V Airfast® RF Power GaN Transistor

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

RF Performance Table

2600 MHz

Typical Doherty single-carrier W-CDMA characterization performance: VDD = 48 Vdc, IDQA = 150 mA, VGSB = –5.4 Vdc, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2575 MHz14.361.97.2–29.1
2605 MHz14.361.77.1–29.5
2635 MHz14.360.96.8–30.4

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Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

End of Life

2496

2690

48

54

251

GaN

Documentation

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3 documents

Compact List

Design Resources

Design Files

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1 design file

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