A2G26H281-04S Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
2496
Frequency (Max) (MHz)
2690
Supply Voltage (Typ) (V)
48
ParameterValue
Peak Power (Typ) (dBm)
54
Peak Power (Typ) (W)
251
Die Technology
GaN

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
A2G26H281-04SR3(935332873128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
4651.5

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
A2G26H281-04SR3
(935332873128)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
A2G26H281-04SR3
(935332873128)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
A2G26H281-04SR3
(935332873128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about A2G26H281-04S

The A2G26H281-04S 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.