A2G26H281-04S|Airfast RF Power GaN Transistor | NXP Semiconductors

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2496-2690 MHz, 50 W Avg., 48 V Airfast® RF Power GaN Transistor

A2G26H281-04S End of Life

The A2G26H281-04S 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

RF Performance Table

2600 MHz

Typical Doherty single-carrier W-CDMA characterization performance: VDD = 48 Vdc, IDQA = 150 mA, VGSB = –5.4 Vdc, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2575 MHz14.361.97.2–29.1
2605 MHz14.361.77.1–29.5
2635 MHz14.360.96.8–30.4

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Die Technology

A2G26H281-04S
Data Sheet

End of Life

2496

2690

48

54

251

GaN

N true 0 PSPA2G26H281-04Sen 3 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V Airfast RF power GaN transistor for cellular base stations 1473387503876731149650 PSP 270.7 KB None None documents None 1473387503876731149650 /docs/en/data-sheet/A2G26H281-04S.pdf 270741 /docs/en/data-sheet/A2G26H281-04S.pdf A2G26H281-04S documents N N 2016-11-09 A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A2G26H281-04S.pdf /docs/en/data-sheet/A2G26H281-04S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Feb 8, 2017 980000996212993340 Data Sheet Y N A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Package Information Package Information 1 3 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L false 0 A2G26H281-04S downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A2G26H281-04S.pdf 2016-11-09 1473387503876731149650 PSP 1 Feb 8, 2017 Data Sheet A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V Airfast RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A2G26H281-04S.pdf English documents 270741 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2G26H281-04S.pdf A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A2G26H281-04S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet 270.7 KB A2G26H281-04S N 1473387503876731149650 Package Information 1 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 3 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 true Y Products

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