A3G26H350W17S|2496-2690 MHz, 59 W Avg, 48 V

A3G26H350W17S|2496-2690 MHz, 59 W Avg, 48 V | NXP Semiconductors

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This A3G26H350W17S 59 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside these frequencies.

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Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
RoHs compliant

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 48 Vdc, I_DQA = 250 mA, V_GSB = -5.5 Vdc, P_out = 59 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2496 MHz	13.3	49.9	8.9	-33.2
2590 MHz	13.5	48.5	9.1	-37.2
2690 MHz	13.3	48.5	8.9	-34.5

Buy/Parametrics

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English

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Airfast<sup>®</sup> RF power GaN transistor for cellular base stations

1607114083379704992677 PSP

377.6 KB

None

documents

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1607114083379704992677

/docs/en/data-sheet/A3G26H350W17S.pdf

377610

/docs/en/data-sheet/A3G26H350W17S.pdf

A3G26H350W17S

documents

2020-12-04

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet

/docs/en/data-sheet/A3G26H350W17S.pdf /docs/en/data-sheet/A3G26H350W17S.pdf

Data Sheet

980000996212993340

2022-12-07

pdf N

Jan 20, 2021

980000996212993340

Data Sheet

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet

Application Note Application Note 1 2

English

The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP).

S989356392744 PSP

664.6 KB

None

documents

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S989356392744

/docs/en/application-note/AN1908.pdf

664592

/docs/en/application-note/AN1908.pdf

AN1908

documents

2016-10-31

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

/docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf

Application Note

645036621402383989

2024-03-13

pdf N

Feb 24, 2011

645036621402383989

Application Note

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

false 0 A3G26H350W17S downloads en true 1 Y PSP Application Note

/docs/en/application-note/AN1908.pdf

2016-10-31

S989356392744 PSP 2

Feb 24, 2011

Application Note

None

/docs/en/application-note/AN1908.pdf

English

documents

664592

None

645036621402383989

2024-03-13

/docs/en/application-note/AN1908.pdf

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

/docs/en/application-note/AN1908.pdf

documents

645036621402383989

Application Note

None

pdf

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

664.6 KB

AN1908

S989356392744

Data Sheet

/docs/en/data-sheet/A3G26H350W17S.pdf

2020-12-04

1607114083379704992677 PSP 1

Jan 20, 2021

Data Sheet

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Airfast<sup>®</sup> RF power GaN transistor for cellular base stations

None

/docs/en/data-sheet/A3G26H350W17S.pdf

English

documents

377610

None

980000996212993340

2022-12-07

/docs/en/data-sheet/A3G26H350W17S.pdf

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet

/docs/en/data-sheet/A3G26H350W17S.pdf

documents

980000996212993340

Data Sheet

None

pdf

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet

377.6 KB

A3G26H350W17S

1607114083379704992677

true Y Products

Documentation

Quick reference to our documentation types.

2 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet[A3G26H350W17S]

PDFJan 20, 2021Rev 1

Design Resources

Design Files

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4 design files

Models
A3G26H350W17S Peaking Class AB S-Parameters

S2PRev 0Nov 12, 202022.7 KBA3G26H350W17S-PEAKING-CLASS-AB

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A3G26H350W17S Carrier Class AB S-Parameters

S2PRev 0Nov 12, 202022.7 KBA3G26H350W17S-CARRIER-CLASS-AB

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A3G26H350W17S Peaking Class C S-Parameters

S2PRev 0Nov 12, 202022.7 KBA3G26H350W17S-PEAKING-CLASS-C

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Printed Circuit Boards and Schematics
A3G26H350W17S 2600 MHz PCB DXF file

ZIPRev 3Nov 12, 202037.6 KBA3G26H350W17S-2600-PCB

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2496-2690 MHz, 59 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2600 MHz

Buy/Parametrics

Documentation

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Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet[A3G26H350W17S]

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Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet[A3G26H350W17S]

Design Resources

Design Files

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A3G26H350W17S Peaking Class AB S-Parameters

A3G26H350W17S Carrier Class AB S-Parameters

A3G26H350W17S Peaking Class C S-Parameters

A3G26H350W17S 2600 MHz PCB DXF file

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A3G26H350W17S Peaking Class AB S-Parameters

A3G26H350W17S Carrier Class AB S-Parameters

A3G26H350W17S Peaking Class C S-Parameters

A3G26H350W17S 2600 MHz PCB DXF file

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2496-2690 MHz, 59 W Avg., 48 V Airfast^® RF Power LDMOS Transistor