A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V | NXP Semiconductors

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2496-2690 MHz, 34 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G26H200W17S End of Life

The A3G26H200W17S 34 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 120 mA, VGSB = –5.3 Vdc, Pout = 34 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
 
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2496 MHz14.754.28.1–29.3
2590 MHz14.855.57.9–30.9
2690 MHz14.254.07.8–34.1

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Die Technology

A3G26H200W17S
Data Sheet

End of Life

2496

2690

48

52.5

178

GaN

N true 0 PSPA3G26H200W17Sen 2 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1584484773478716079151 PSP 347.2 KB None None documents None 1584484773478716079151 /docs/en/data-sheet/A3G26H200W17S.pdf 347228 /docs/en/data-sheet/A3G26H200W17S.pdf A3G26H200W17S documents N N 2020-03-17 A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G26H200W17S.pdf /docs/en/data-sheet/A3G26H200W17S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 13, 2020 980000996212993340 Data Sheet Y N A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages false 0 A3G26H200W17S downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A3G26H200W17S.pdf 2020-03-17 1584484773478716079151 PSP 1 Mar 13, 2020 Data Sheet A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A3G26H200W17S.pdf English documents 347228 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G26H200W17S.pdf A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G26H200W17S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V Data Sheet 347.2 KB A3G26H200W17S N 1584484773478716079151 true Y Products

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