A3G26H200W17S Product Information|NXP

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A3G26H200W17SR3

End of Life

12NC: 935397341128

Details

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Operating Features

ParameterValue
Frequency (Min) (MHz)
2496
Frequency (Max) (MHz)
2690
Supply Voltage (Typ) (V)
48
ParameterValue
Peak Power (Typ) (dBm)
52.5
Peak Power (Typ) (W)
178
Die Technology
GaN

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
A3G26H200W17SR3(935397341128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
3243.2

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
A3G26H200W17SR3
(935397341128)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
A3G26H200W17SR3
(935397341128)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
A3G26H200W17SR3
(935397341128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about A3G26H200W17S

The A3G26H200W17S 34 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.