Design Files
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- No Longer Manufactured
- MHTG1200HS
300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
This MHTG1200HS 300 W GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.
This part is characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-780S-4L
Product Details
Features
- Characterized with series equivalent large-signal impedance parameters and common source S-parameters
- Internally matched for ease of use
- Qualified for operation at 55 Vdc
- Integrated ESD protection
- 150°C case operating temperature
- 225°C die temperature capability
- RoHS Compliant
- Consumer cooking
- Commercial cooking
Part numbers include: MHTG1200HS.
RF Performance Tables
Typical Performance
In 2400-2500 MHz MHTG1200HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)| Frequency (MHz) |
Signal Type | Pin (W) |
Pout (W) |
Gps (dB) |
ηD (%) |
| 2400 | CW | 10.0 | 336 | 15.3 | 70.4 |
| 2450 | 10.0 | 332 | 15.2 | 73.0 | |
| 2500 | 10.0 | 307 | 14.9 | 74.4 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 2450 | Pulse (100 µsec, 20% Duty Cycle) | > 20:1 at All Phase Angles | 12.6 Peak | 55 | No Device Degradation |
Buy/Parametrics
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Documentation
Quick reference to our documentation types.
3 documents
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Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
NI-780S-4L
