Application Note (1)
Package Information (1)
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NI-780S-4L[sot1826-1-]
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This MHTG1200HS 300 W GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.
This part is characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Frequency (MHz) |
Signal Type | Pin (W) |
Pout (W) |
Gps (dB) |
ηD (%) |
2400 | CW | 10.0 | 336 | 15.3 | 70.4 |
2450 | 10.0 | 332 | 15.2 | 73.0 | |
2500 | 10.0 | 307 | 14.9 | 74.4 |
Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
2450 | Pulse (100 µsec, 20% Duty Cycle) | > 20:1 at All Phase Angles | 12.6 Peak | 55 | No Device Degradation |
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