A2V09H400-04S|720-960 MHz, 102 W Avg, 48 V | NXP Semiconductors

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A2V09H400-04S 720-960 MHz, 102 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2V09H400-04S Active

This 102 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Greater negative gate--source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 750 mA, VGSB = 0.8 Vdc, Pout = 102 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
920 MHz 18.7 53.5 7.2 –29.5
940 MHz 18.9 54.0 7.0 –29.2
960 MHz 18.5 53.4 6.8 –28.8

700 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 46 Vdc, IDQA = 300 mA, VGSB = 2.3 Vdc, Pout = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 P3dB
(dBm)		 ACPR
(dBc)
758 MHz18.356.17.957.4–29.7
780 MHz18.755.88.057.5–31.0
803 MHz18.855.58.057.5–33.0

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Die Technology

A2V09H400-04S
Data Sheet

Active

720

960

48

57.1

512

LDMOS

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