Product Details

Features

Advanced high performance in-package Doherty
Greater negative gate--source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 750 mA, V_GSB = 0.8 Vdc, P_out = 102 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	18.7	53.5	7.2	–29.5
940 MHz	18.9	54.0	7.0	–29.2
960 MHz	18.5	53.4	6.8	–28.8

700 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 46 Vdc, I_DQA = 300 mA, V_GSB = 2.3 Vdc, P_out = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	P3dB (dBm)	ACPR (dBc)
758 MHz	18.3	56.1	7.9	57.4	–29.7
780 MHz	18.7	55.8	8.0	57.5	–31.0
803 MHz	18.8	55.5	8.0	57.5	–33.0

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Documentation

Quick reference to our documentation types.

3 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Data Sheet[A2V09H400-04S]

PDFFeb 18, 2021Rev 2

NI-780S-4L[98ASA10718D]

PDFAug 15, 2016Rev C

Design Resources

Design Files

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5 design files

Models
A2V09H400-04S Carrier S-Parameters

S2PRev 0Sep 5, 201910.8 KBA2V09H400-04S-Carrier

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Models
A2V09H400-04S Peaking Class C S-Parameters

S2PRev 0Sep 5, 201910.8 KBA2V09H400-04S-Peaking-Class-C

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A2V09H400-04S Peaking Class AB S-Parameters

S2PRev 0Sep 5, 201910.8 KBA2V09H400-04S-Peaking-Class-AB

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Printed Circuit Boards and Schematics
A2V09H400-04S 900 MHz PCB DXF file

ZIPRev 0Sep 5, 201967.7 KBA2V09H400-04S-900-PCB

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Design Files - miscellaneous
A2V09H400-04S 920-960 MHz Design Files

RARRev 0Nov 10, 2021634.4 KBA2V09H400-04S-DESIGN-FILES

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A2V09H400-04S 720-960 MHz, 102 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

900 MHz

700 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Data Sheet[A2V09H400-04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Data Sheet[A2V09H400-04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

Design Resources

Design Files

Filter by

A2V09H400-04S Carrier S-Parameters

A2V09H400-04S Peaking Class C S-Parameters

A2V09H400-04S Peaking Class AB S-Parameters

A2V09H400-04S 900 MHz PCB DXF file

A2V09H400-04S 920-960 MHz Design Files

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Filter By

A2V09H400-04S Carrier S-Parameters

A2V09H400-04S Peaking Class C S-Parameters

A2V09H400-04S Peaking Class AB S-Parameters

A2V09H400-04S 900 MHz PCB DXF file

A2V09H400-04S 920-960 MHz Design Files

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A2V09H400-04S 720-960 MHz, 102 W Avg., 48 V Airfast^® RF Power LDMOS Transistor