A3G18H500-04S|1805-2200 MHz, 107 W Avg, 48 V | NXP Semiconductors

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The A3G18H500-04S 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Data Sheet

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Able to withstand extremely high output VSWR and broadband operating conditions
RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 200 mA, V_GSB = –5 Vdc, P_out = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	15.3	58.4	7.1	–31.9
1840 MHz	15.4	57.7	7.0	–33.2
1880 MHz	15.4	57.7	6.7	–33.8

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
A3G18H500-04S Data Sheet			End of Life	1805	2200	48	57.3	537	GaN

Documentation

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2 documents

Compact List

A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Data Sheet[A3G18H500-04S]

PDFAug 7, 2020Rev 1

NI-780S-4L[98ASA10718D]

PDFAug 15, 2016Rev C

Design Resources

Design Files

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4 design files

Models
A3G18H500-04S S-Parameters Carrier

S2PRev 0May 25, 2017238.4 KBA3G18H500-04S-CARRIER

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Models
A3G18H500-04S S-Parameters Peaking Class AB

S2PRev 0May 25, 2017238.4 KBA3G18H500-04S-PEAKING-CLASS-AB

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A3G18H500-04S S-Parameters Peaking Class C

S2PRev 0May 25, 2017238.4 KBA3G18H500-04S-PEAKING-CLASS-C

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Printed Circuit Boards and Schematics
A3G18H500-04S 1800 MHz PCB DXF file

ZIPRev 3May 25, 201794.2 KBA3G18H500-04S-1800-PCB

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1805-2200 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

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Data Sheet (1)

A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Data Sheet[A3G18H500-04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

Filter by

Data Sheet (1)

A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Data Sheet[A3G18H500-04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

Design Resources

Design Files

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A3G18H500-04S S-Parameters Carrier

A3G18H500-04S S-Parameters Peaking Class AB

A3G18H500-04S S-Parameters Peaking Class C

A3G18H500-04S 1800 MHz PCB DXF file

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Filter By

A3G18H500-04S S-Parameters Carrier

A3G18H500-04S S-Parameters Peaking Class AB

A3G18H500-04S S-Parameters Peaking Class C

A3G18H500-04S 1800 MHz PCB DXF file

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1805-2200 MHz, 107 W Avg., 48 V Airfast^® RF Power LDMOS Transistor