The MMRF5018HS 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.
This part is characterized and performance is guaranteed for applications operating in the 1–2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 450–2700(1) | CW | 100 CW | 12.0 | 40.0 |
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage | Result |
| 2500(2) | Pulse (100 µsec, 20% Duty Cycle) |
> 20:1 at All Phase Angles | 5.0 Peak (3 dB Overdrive) |
50 | No Device Degradation |
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Quick reference to our documentation types.
2 design files
Receive the full breakdown. See the product footprint and more in the eCad file.
