MMRF1316N|1.8-600 MHz, 300 W CW, 50 V | NXP Semiconductors

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1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor

MMRF1316N Active
  • This page contains information on a product that is not recommended for new designs.
This high ruggedness device, MMRF1316NR1, is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design allowing wide frequency range utilization, between 1.8 and 600 MHz.

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Features

  • Wide Operating Frequency Range
  • Ruggedness
  • Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108(1,3)CW36123.880.1

230 MHz Narrowband

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
230(2)CW30025.070.0
230(2)Pulse (100 µsec,
20% Duty Cycle)		300 Peak27.071.0

Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
98(1)CW> 65:1
at all Phase
Angles		3
(3 dB
Overdrive)		50No
Device
Degradation
230(2)Pulse
(100 µsec,
20% Duty Cycle)		1.16 Peak
(3 dB
Overdrive)
1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

Buy/Parametrics

1 result

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Part

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

P1dB (Typ) (dBm)

P1dB (Typ) (W)

Die Technology

MMRF1316N
Data Sheet

Active

1.8

600

50

54.8

300

LDMOS

N true 0 PSPMMRF1316Nen 5 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English The MMRF1316NR1 is a high ruggedness device and is designed for use in VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design allowing wide frequency range utilization, between 1.8 and 600 MHz. 1406567352669699048059 PSP 969.0 KB None None documents None 1406567352669699048059 /docs/en/data-sheet/MMRF1316N.pdf 968960 /docs/en/data-sheet/MMRF1316N.pdf MMRF1316N documents N N 2016-10-31 MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/MMRF1316N.pdf /docs/en/data-sheet/MMRF1316N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 25, 2014 980000996212993340 Data Sheet Y N MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 0 English The performances of RF power amplifiers for base station transceivers results in a tradeoff between linearity, efficiency and gain. This tradeoff leads to an optimum quiescent current. But the following parameters modify this bias point: temperature range (commonly -40 deg. C/+85 deg. C), supply voltage and bias voltage variations (commonly +/-5 percent) and manufacturing spread. The purpose of this paper is to present a new biasing circuit which minimizes quiescent current variations suitable for LDMOS RF N966579371225 PSP 90.5 KB None None documents None N966579371225 /docs/en/application-note/AN1643.pdf 90480 /docs/en/application-note/AN1643.pdf AN1643 documents N N 2016-10-31 RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Notes /docs/en/application-note/AN1643.pdf /docs/en/application-note/AN1643.pdf Application Note N 645036621402383989 2022-12-07 pdf N en Jan 31, 1998 645036621402383989 Application Note Y N RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Notes Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 5 F English 98ASA10577D, 1486-03, TO-270, 4 Lead 117Dnwyr PSP 75.9 KB None None documents None 117Dnwyr /docs/en/package-information/98ASA10577D.pdf 75944 /docs/en/package-information/98ASA10577D.pdf SOT1736-1 documents N N 2016-10-31 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins /docs/en/package-information/98ASA10577D.pdf /docs/en/package-information/98ASA10577D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 18, 2016 302435339416912908 Package Information D N 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins false 0 MMRF1316N downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1643.pdf 2016-10-31 N966579371225 PSP 3 Jan 31, 1998 Application Note The performances of RF power amplifiers for base station transceivers results in a tradeoff between linearity, efficiency and gain. This tradeoff leads to an optimum quiescent current. But the following parameters modify this bias point: temperature range (commonly -40 deg. C/+85 deg. C), supply voltage and bias voltage variations (commonly +/-5 percent) and manufacturing spread. The purpose of this paper is to present a new biasing circuit which minimizes quiescent current variations suitable for LDMOS RF None /docs/en/application-note/AN1643.pdf English documents 90480 None 645036621402383989 2022-12-07 N /docs/en/application-note/AN1643.pdf RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Notes /docs/en/application-note/AN1643.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Notes 90.5 KB AN1643 N N966579371225 Data Sheet 1 /docs/en/data-sheet/MMRF1316N.pdf 2016-10-31 1406567352669699048059 PSP 1 Jul 25, 2014 Data Sheet The MMRF1316NR1 is a high ruggedness device and is designed for use in VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design allowing wide frequency range utilization, between 1.8 and 600 MHz. None /docs/en/data-sheet/MMRF1316N.pdf English documents 968960 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1316N.pdf MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/MMRF1316N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet 969.0 KB MMRF1316N N 1406567352669699048059 Package Information 1 /docs/en/package-information/98ASA10577D.pdf 2016-10-31 117Dnwyr PSP 5 Jan 18, 2016 Package Information 98ASA10577D, 1486-03, TO-270, 4 Lead None /docs/en/package-information/98ASA10577D.pdf English documents 75944 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10577D.pdf 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins /docs/en/package-information/98ASA10577D.pdf documents 302435339416912908 Package Information N en None D pdf F N N 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins 75.9 KB SOT1736-1 N 117Dnwyr Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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