MMRF2010N|1030-1090 MHz, 250 W Peak, 50 V | NXP Semiconductors

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1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers

MMRF2010N Active
The MMRF2010N and MMRF2010GN are 2-stage RFICs designed for IFF transponder applications operating from 1030 to 1090 MHz. These devices are suitable for use in pulse applications such as IFF and secondary radar transponders.

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Features

  • Characterized over 1030-1090 MHz
  • On-chip input (50 Ohm) and interstage matching
  • Single ended
  • Integrated ESD protection
  • Low thermal resistance
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHS Compliant
  • Driver PA for high power pulse applications
  • IFF and secondary radar

RF Performance Tables

Typical Wideband Performance

(52 Vdc, TA = 25°C)
Frequency
(MHz)(1)		 Signal Type Pout
(W)		 Gps
(dB)		 2nd Stage Eff.
(%)
1030Pulse
(128 µsec, 10% Duty Cycle)		250 Peak34.161.0
109033.461.9
1030Pulse
(2 msec, 20% Duty Cycle)		250 Peak33.661.5
109032.662.9

Narrowband Performance

(50 Vdc, TA = 25°C)
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 2nd Stage Eff.
(%)
1090(2)Pulse
(128 µsec, 10% Duty Cycle)		250 Peak32.161.4

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test Voltage Result
1090(1)Pulse
(2 msec, 20% Duty Cycle)		> 20:1 at all Phase Angles 0.316 W Peak
(3 dB Overdrive)		52No Device Degradation
1. Measured in 1030-1090 MHz reference circuit.
2. Measured in 1090 MHz narrowband test circuit.

Buy/Parametrics

2 results

Include 0 NRND

Part

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Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

P1dB (Typ) (dBm)

P1dB (Typ) (W)

Die Technology

MMRF2010GN
Data Sheet

Active

1030

1090

50

54

250

LDMOS

MMRF2010N
Data Sheet

Active

1030

1090

50

54

250

LDMOS

N true 0 PSPMMRF2010Nen 9 Application Note Application Note t789 4 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Supporting Information Supporting Information t531 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English MMRF2010N, MMRF2010GN 1030-1090 MHz, 250 W Peak, 50 V RF LDMOS power amplifier for IFF transponder applications 1446935376233715828841 PSP 820.7 KB None None documents None 1446935376233715828841 /docs/en/data-sheet/MMRF2010N.pdf 820727 /docs/en/data-sheet/MMRF2010N.pdf MMRF2010N documents N N 2017-04-13 MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet /docs/en/data-sheet/MMRF2010N.pdf /docs/en/data-sheet/MMRF2010N.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Apr 6, 2017 980000996212993340 Data Sheet Y N MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet Application Note Application Note 4 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 5 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 Technical Notes Technical Notes 1 6 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 7 B English 98ASA10650D, 1618-02, 14 Lead TO-270 Wide Body 1128707279103707732108 PSP 72.7 KB None None documents None 1128707279103707732108 /docs/en/package-information/98ASA10650D.pdf 72681 /docs/en/package-information/98ASA10650D.pdf SOT1720-2 documents N N 2016-10-31 98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins /docs/en/package-information/98ASA10650D.pdf /docs/en/package-information/98ASA10650D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 18, 2016 302435339416912908 Package Information D N 98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins 8 B English 98ASA10653D, 1621-02, 14 Lead TO-270 Wide Body Gull Wing 1128707281180741926906 PSP 77.4 KB None None documents None 1128707281180741926906 /docs/en/package-information/98ASA10653D.pdf 77443 /docs/en/package-information/98ASA10653D.pdf SOT1720-3 documents N N 2016-10-31 98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins /docs/en/package-information/98ASA10653D.pdf /docs/en/package-information/98ASA10653D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins Supporting Information Supporting Information 1 9 0 English MMRF1312H, MMRF1314H, MMRF1317H, MMRF2010N RF high power LDMOS avionics devices 1458978153090712917208 PSP 726.5 KB None None documents None 1458978153090712917208 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf 726548 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf MILITARY_HIGH_POWER_RADAR_TRN_SI documents N N 2016-10-31 RF Military High Power Avionics Devices /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf Supporting Information N 371282830530968666 2024-03-13 pdf N en Mar 25, 2016 371282830530968666 Supporting Information Y N RF Military High Power Avionics Devices false 0 MMRF2010N downloads en true 1 Y PSP Application Note 4 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 4 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 5 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 Data Sheet 1 /docs/en/data-sheet/MMRF2010N.pdf 2017-04-13 1446935376233715828841 PSP 1 Apr 6, 2017 Data Sheet MMRF2010N, MMRF2010GN 1030-1090 MHz, 250 W Peak, 50 V RF LDMOS power amplifier for IFF transponder applications None /docs/en/data-sheet/MMRF2010N.pdf English documents 820727 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/MMRF2010N.pdf MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet /docs/en/data-sheet/MMRF2010N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet 820.7 KB MMRF2010N N 1446935376233715828841 Package Information 2 /docs/en/package-information/98ASA10650D.pdf 2016-10-31 1128707279103707732108 PSP 7 Mar 18, 2016 Package Information 98ASA10650D, 1618-02, 14 Lead TO-270 Wide Body None /docs/en/package-information/98ASA10650D.pdf English documents 72681 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10650D.pdf 98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins /docs/en/package-information/98ASA10650D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins 72.7 KB SOT1720-2 N 1128707279103707732108 /docs/en/package-information/98ASA10653D.pdf 2016-10-31 1128707281180741926906 PSP 8 Feb 26, 2016 Package Information 98ASA10653D, 1621-02, 14 Lead TO-270 Wide Body Gull Wing None /docs/en/package-information/98ASA10653D.pdf English documents 77443 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10653D.pdf 98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins /docs/en/package-information/98ASA10653D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins 77.4 KB SOT1720-3 N 1128707281180741926906 Supporting Information 1 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf 2016-10-31 1458978153090712917208 PSP 9 Mar 25, 2016 Supporting Information MMRF1312H, MMRF1314H, MMRF1317H, MMRF2010N RF high power LDMOS avionics devices None /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf English documents 726548 None 371282830530968666 2024-03-13 N /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf RF Military High Power Avionics Devices /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N RF Military High Power Avionics Devices 726.5 KB MILITARY_HIGH_POWER_RADAR_TRN_SI N 1458978153090712917208 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 6 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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