MMRF1310H|1.8-600 MHz, 300 W CW, 50 V | NXP Semiconductors

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1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs

MMRF1310H End of Life
  • This page contains information on a product that is not recommended for new designs.
The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices, designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz.

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Product Details

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • NI-780H-4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • NI-780S-4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13-inch Reel.

RF Performance Table

130, 230 MHz Broadband

Typical Performance: VDD = 50 Vdc, IDQ = 100 mA
Signal Type Pout
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)		 IRL
(dB)
Pulse (100 µsec,
20% Duty Cycle)		 300 Peak23026.574.0–16
CW300 Avg.13025.080.0–15
  • Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles
    • 300 W CW Output Power
    • 300 W Pulse Peak Power, 20% Duty Cycle, 100 µsec
  • Capable of 300 W CW Operation

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Frequency (Min) (MHz)

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P1dB (Typ) (W)

Die Technology

MMRF1310H
Data Sheet
—

End of Life

1.8

600

50

54.8

300

LDMOS

MMRF1310HS
Data Sheet

End of Life

1.8

600

50

54.8

300

LDMOS

N true 0 PSPMMRF1310Hen 5 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices and are designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz. 1406325033709704790147 PSP 524.7 KB None None documents None 1406325033709704790147 /docs/en/data-sheet/MMRF1310H.pdf 524746 /docs/en/data-sheet/MMRF1310H.pdf MMRF1310H documents N N 2016-10-31 MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1310H.pdf /docs/en/data-sheet/MMRF1310H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 24, 2014 980000996212993340 Data Sheet Y N MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 4 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L 5 A English 98ASA10793D, 465M-01, NI 780H-4L 1177631115779705085440 PSP 47.9 KB None None documents None 1177631115779705085440 /docs/en/package-information/98ASA10793D.pdf 47948 /docs/en/package-information/98ASA10793D.pdf SOT1827-1 documents N N 2016-10-31 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf /docs/en/package-information/98ASA10793D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 21, 2016 302435339416912908 Package Information D N 98ASA10793D, NI-780H-4L false 0 MMRF1310H downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Data Sheet 1 /docs/en/data-sheet/MMRF1310H.pdf 2016-10-31 1406325033709704790147 PSP 1 Jul 24, 2014 Data Sheet The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices and are designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz. None /docs/en/data-sheet/MMRF1310H.pdf English documents 524746 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1310H.pdf MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1310H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet 524.7 KB MMRF1310H N 1406325033709704790147 Package Information 2 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 4 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 /docs/en/package-information/98ASA10793D.pdf 2016-10-31 1177631115779705085440 PSP 5 Mar 21, 2016 Package Information 98ASA10793D, 465M-01, NI 780H-4L None /docs/en/package-information/98ASA10793D.pdf English documents 47948 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10793D.pdf 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA10793D, NI-780H-4L 47.9 KB SOT1827-1 N 1177631115779705085440 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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