MMRF1317H|1030-1090 MHz, 1300 W Peak, 50 V | NXP Semiconductors

1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors

  • This page contains information on a product that is not recommended for new designs.

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Features

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull, or quadrature configuration
  • High ruggedness,handles > 10:1 VSWR
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS Compliant
  • Ground-based secondary surveillance radars
  • IFF transponders

RF Performance Tables

Typical Performance

In 1030, 1090 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1030(1)Pulse
(128 µsec, 10% Duty Cycle)
1300 Peak18.956.0
1090(1)1100 Peak18.857.9

Typical Narrowband Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1030(2)Pulse
(128 µsec, 10% Duty Cycle)
1300 Peak18.258.1

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030(2)Pulse
(128 µsec, 10% Duty Cycle)
> 10:1 at all Phase Angles40
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1030, 1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband test circuit.

Buy/Parametrics

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Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

P1dB (Typ) (dBm)

P1dB (Typ) (W)

Die Technology

Not Recommended for New Designs

1030

1090

50

61.1

1300

LDMOS

Not Recommended for New Designs

1030

1090

50

61.1

1300

LDMOS

Documentation

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1-5 of 6 documents

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Design Files

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5 design files

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