AFV121KH|1000 W Pulse, 960-1215 MHz, 50 V | NXP Semiconductors

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1000 W Peak, 960-1215 MHz, 50 V Airfast® RF Power LDMOS Transistors

AFV121KH Active
These RF power transistors, AFV121KH, AFV121KHS and AFV121KGS, are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.

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Features

  • Internally Input and Output Matched for Broadband Operation and Ease of Use
  • Device Can Be Used Single-Ended, Push-Pull, or in a Quadrature Configuration
  • Qualified up to a Maximum of 50 VDD Operation
  • High Ruggedness, Handles > 20:1 VSWR
  • Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • Air Traffic Control Systems (ATC), Including Ground-based Secondary Radars such as Mode S ELM Interrogators
  • Distance Measuring Equipment (DME)
  • Mode S Transponders, Including:
    • Traffic Alert and Collision Avoidance Systems (TCAS)
    • Automatic Dependent Surveillance-Broadcast In and Out (ADS-B) Using,
      e.g., 1090 Extended Squitter or Universal Access Transponder (UAT)

RF Performance Tables

Typical Short Pulse Performance:

In 960-1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 mA, Pin = 25 W
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
960Pulse
(128 µsec, 10% Duty Cycle)		1390 Peak17.551.1
10301410 Peak17.551.8
10901370 Peak17.452.2
12151230 Peak16.955.8

Typical Long Pulse Performance:

In 960-1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 mA, Pin = 25 W
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
960Pulse
(2 msec, 10% Duty Cycle)		1160 Peak16.650.8
10301190 Peak16.852.1
10901210 Peak16.849.2
12151060 Peak16.250.6

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
1030(1)Pulse
(128 µsec, 10% Duty Cycle)		> 20:1 at all Phase Angles25 Peak
(3 dB Overdrive)		50No Device Degradation
1. Measured in 960-1215 MHz reference circuit.

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N true 0 PSPAFV121KHen 8 Application Note Application Note t789 1 Brochure Brochure t518 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 3 Supporting Information Supporting Information t531 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English AFV121KH 1000 W Peak over 960-1215 MHz, 50 V RF power LDMOS transistors for pulse applications such as DME, secondary radars and transponders 1447990154329729357088 PSP 1.0 MB None None documents None 1447990154329729357088 /docs/en/data-sheet/AFV121KH.pdf 1041342 /docs/en/data-sheet/AFV121KH.pdf AFV121KH documents N N 2016-10-31 AFV121KH 1000 W Peak, 960-1215 MHz, 50 V Data Sheet /docs/en/data-sheet/AFV121KH.pdf /docs/en/data-sheet/AFV121KH.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Nov 19, 2015 980000996212993340 Data Sheet Y N AFV121KH 1000 W Peak, 960-1215 MHz, 50 V Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Brochure Brochure 1 3 2 English Comprehensive portfolio of RF power transistors for commercial aerospace applications. 1243895030259713217473 PSP 1.9 MB None None documents None 1243895030259713217473 /docs/en/brochure/BR1608.pdf 1872765 /docs/en/brochure/BR1608.pdf BR1608 documents N N 2016-10-31 RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf /docs/en/brochure/BR1608.pdf Brochure N 712453003803778552 2024-03-13 pdf N en Sep 4, 2015 712453003803778552 Brochure Y N RF Solutions for Commercial Aerospace Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 3 5 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 6 B English 1349216465058725247011 PSP 48.5 KB None None documents None 1349216465058725247011 /docs/en/package-information/98ASA00459D.pdf 48461 /docs/en/package-information/98ASA00459D.pdf SOT1806-2 documents N N 2016-10-31 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00459D.pdf /docs/en/package-information/98ASA00459D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 29, 2016 302435339416912908 Package Information D N 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins 7 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins Supporting Information Supporting Information 1 8 0 English Airfast<sup>&#174;</sup> RF power transistors feature exceptional system function integration and broadband high power performance (AFIC10275N, AFV121KH) 1430706563125720653439 PSP 460.0 KB None None documents None 1430706563125720653439 /docs/en/supporting-information/RF_POWER_AVIONICS_TRN_SI.pdf 460044 /docs/en/supporting-information/RF_POWER_AVIONICS_TRN_SI.pdf RF_POWER_AVIONICS_TRN_SI documents N N 2016-10-31 Airfast<sup>®</sup> RF Power Solutions for Avionics /docs/en/supporting-information/RF_POWER_AVIONICS_TRN_SI.pdf /docs/en/supporting-information/RF_POWER_AVIONICS_TRN_SI.pdf Supporting Information N 371282830530968666 2022-12-07 pdf N en May 5, 2015 371282830530968666 Supporting Information Y N Airfast<sup>®</sup> RF Power Solutions for Avionics false 0 AFV121KH downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Brochure 1 /docs/en/brochure/BR1608.pdf 2016-10-31 1243895030259713217473 PSP 3 Sep 4, 2015 Brochure Comprehensive portfolio of RF power transistors for commercial aerospace applications. None /docs/en/brochure/BR1608.pdf English documents 1872765 None 712453003803778552 2024-03-13 N /docs/en/brochure/BR1608.pdf RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf documents 712453003803778552 Brochure N en None Y pdf 2 N N RF Solutions for Commercial Aerospace 1.9 MB BR1608 N 1243895030259713217473 Data Sheet 1 /docs/en/data-sheet/AFV121KH.pdf 2016-10-31 1447990154329729357088 PSP 1 Nov 19, 2015 Data Sheet AFV121KH 1000 W Peak over 960-1215 MHz, 50 V RF power LDMOS transistors for pulse applications such as DME, secondary radars and transponders None /docs/en/data-sheet/AFV121KH.pdf English documents 1041342 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/AFV121KH.pdf AFV121KH 1000 W Peak, 960-1215 MHz, 50 V Data Sheet /docs/en/data-sheet/AFV121KH.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N AFV121KH 1000 W Peak, 960-1215 MHz, 50 V Data Sheet 1.0 MB AFV121KH N 1447990154329729357088 Package Information 3 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 5 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ASA00459D.pdf 2016-10-31 1349216465058725247011 PSP 6 Feb 29, 2016 Package Information None /docs/en/package-information/98ASA00459D.pdf English documents 48461 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00459D.pdf 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00459D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins 48.5 KB SOT1806-2 N 1349216465058725247011 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 7 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 Supporting Information 1 /docs/en/supporting-information/RF_POWER_AVIONICS_TRN_SI.pdf 2016-10-31 1430706563125720653439 PSP 8 May 5, 2015 Supporting Information Airfast<sup>&#174;</sup> RF power transistors feature exceptional system function integration and broadband high power performance (AFIC10275N, AFV121KH) None /docs/en/supporting-information/RF_POWER_AVIONICS_TRN_SI.pdf English documents 460044 None 371282830530968666 2022-12-07 N /docs/en/supporting-information/RF_POWER_AVIONICS_TRN_SI.pdf Airfast<sup>®</sup> RF Power Solutions for Avionics /docs/en/supporting-information/RF_POWER_AVIONICS_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N Airfast<sup>®</sup> RF Power Solutions for Avionics 460.0 KB RF_POWER_AVIONICS_TRN_SI N 1430706563125720653439 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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