MMRF1317H|1030-1090 MHz, 1300 W Peak, 50 V

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These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars.

See product image

Data Sheet

Application Notes

Product Details

Features

Internally input and output matched for broadband operation and ease of use
Device can be used in a single-ended, push-pull, or quadrature configuration
High ruggedness,handles > 10:1 VSWR
Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
Characterized with series equivalent large-signal impedance parameters
RoHS Compliant

Ground-based secondary surveillance radars
IFF transponders

Part numbers include: MMRF1317H, MMRF1317HS.

Key Parametrics

Frequency (Min) (MHz)

1030
Frequency (Max) (MHz)

1090
Supply Voltage (Typ) (V)

50
P1dB (Typ) (dBm)

61.1
P1dB (Typ) (W)

1300
Die Technology

LDMOS

RF Performance Tables

Typical Performance

In 1030, 1090 MHz reference circuit, V_DD = 50 Vdc, I_DQ(A+B) = 100 mA

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
1030⁽¹⁾	Pulse (128 µsec, 10% Duty Cycle)	1300 Peak	18.9	56.0
1090⁽¹⁾	Pulse (128 µsec, 10% Duty Cycle)	1100 Peak	18.8	57.9

Typical Narrowband Performance

V_DD = 50 Vdc, I_DQ(A+B) = 100 mA

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
1030⁽²⁾	Pulse (128 µsec, 10% Duty Cycle)	1300 Peak	18.2	58.1

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
1030⁽²⁾	Pulse (128 µsec, 10% Duty Cycle)	> 10:1 at all Phase Angles	40 (3 dB Overdrive)	50	No Device Degradation

1. Measured in 1030, 1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband test circuit.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

1-5 of 6 documents

^{Data Sheet}
MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet

PDFRev 0Mar 25, 2016866.6 KBMMRF1317HEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDFRev 1Feb 24, 2011664.6 KBAN1908English
^{Package Information}
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HOct 25, 2019159.0 KBSOT1787-1English
^{Package Information}
98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HFeb 23, 201644.6 KBSOT1829-1English
^{Supporting Information}
RF Military High Power Avionics Devices

PDFRev 0Mar 25, 2016726.5 KBMILITARY_HIGH_POWER_RADAR_TRN_SIEnglish

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Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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^Models
MMRF1317H RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00202.3 KBMMRF1317H_MDL_ADS
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^Models
MMRF1317H RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Mar 25, 2016 00:00:00581.7 KBMMRF1317H_MDL_AWR
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^{Printed Circuit Boards and Schematics}
MMRF1317H 1030-1090 MHz Reference Circuit Design Files

ZIPRev 0Sep 20, 2019 00:00:005.3 MBMMRF1317H-1030-1090-MHz-Reference-Circuit
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1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors