Design Files
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1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors
- This page contains information on a product that is not recommended for new designs.
MMRF1305HR5 and MMRF1305HSR5 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications
and radar. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
NI-780H-4L, NI-780S-4L Package Image
Product Details
Features
- Wide Operating Frequency Range
- Very Rugged
- Unmatched, Capable of Very Broadband Operation
- Integrated Stability Enhancements
- Low Thermal Resistance
- Integrated ESD Protection Circuitry
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
Part numbers include: MMRF1305H, MMRF1305HS.
Key Parametrics
-
- Frequency (Min) (MHz)
- 1.8
-
- Frequency (Max) (MHz)
- 2000
-
- Supply Voltage (Typ) (V)
- 50
-
- P1dB (Typ) (dBm)
- 50
-
- P1dB (Typ) (W)
- 100
-
- Die Technology
- LDMOS
RF Performance Tables
30-512 MHz Broadband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
IMD (dBc) |
| 30 to 512 | Two-Tone (100 kHz spacing) | 100 PEP | 19.0 | 30.0 | –30 |
512 MHz Narrowband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 512 | CW | 100 | 27.2 | 70.0 |
| 512 | Pulse (200 µsec, 20% Duty Cycle) | 100 Peak | 26.0 | 70.0 |
Ruggedness, 512 MHz
| Frequency (MHz) |
Signal Type | VSWR | Pout (W) |
Test Voltage |
Result |
| 512 | Pulse (100 µsec, 20% Duty Cycle) | >65:1 at all Phase Angles | 130 (3 dB Overdrive) | 50 | No Device Degradation |
| 512 | CW | 126 (3 dB Overdrive) |
Buy/Parametrics
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Documentation
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