NPN wideband silicon RF transistor | NXP Semiconductors

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NPN Wideband Silicon RF Transistor

BFU590Q End of Life

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.

The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

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Product Details

Features

  • Medium power, high linearity, high breakdown voltage RF transistor
  • AEC-Q101 qualified
  • Maximum stable gain 11 dB at 900 MHz
  • PL(1dB) 22 dBm at 900 MHz
  • 8 GHz fT silicon technology
  • Automotive applications
  • Broadband amplifiers
  • Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
  • Large signal amplifiers for ISM applications

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Generation

fT [typ] (MHz)

VCEO [max] (V)

Ptot [max] (mW)

Polarity

Status

BFU590Q
Data Sheet

5th

8000

12

2000

NPN

End of Life

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Application Note (2)
Brochure (1)
Data Sheet (1)
Packing Information (1)
User Guide (1)

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4 design files

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