BFU530W | NXP Semiconductors

NPN Wideband Silicon RF Transistor

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Product Details

Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
  • Maximum stable gain 18.5 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

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Documentation

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9 documents

Compact List

Application Note (2)
Brochure (1)
Data Sheet (1)
Package Information (1)
Packing Information (2)
Supporting Information (1)
User Guide (1)

Design Files

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5 design files

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