NPN wideband silicon RF transistor | NXP Semiconductors

NPN wideband silicon RF transistor | NXP Semiconductors

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NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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Application Notes

Product Details

Features

Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz f_T silicon germanium technology

Target Applications

2nd LNA stage and mixer stage in DBS LNB’s
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ka band oscillators DRO’s

Buy/Parametrics

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Design Resources

Design Files

Quick reference to our design files types.

2 design files

Models
S-parameters BFU725F/N1

ZIPRev 1.0Jun 6, 2012217.5 KBSPAR_BFU725FN1
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Design Files - miscellaneous
NXP design kit: RF small signal

ZIPRev 2.4May 12, 201618.3 MBNXP_DESIGN_KIT_RF_SMALLSIGNAL
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