NPN wideband silicon RF transistor | NXP Semiconductors

NPN wideband silicon RF transistor | NXP Semiconductors

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NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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Product Details

Features

110 GHz f_T silicon germanium technology
High maximum output third-order intercept point 32 dBm at 1.8 GHz
Low noise high linearity RF transistor

Target Applications

GPS
High linearity applications
Ka band oscillators DRO’s
LTE, cellular, UMTS
Medium output power applications
SDARS first stage LNA
Wi-Fi / WLAN / WiMAX
ZigBee

Buy/Parametrics

Part Show description	Order	CAD Model	Generation	f_T [typ] (MHz)	V_CEO [max] (V)	P_tot [max] (mW)	Polarity	@f (MHz)	@V_CE (V)	@I_C (mA)	NF (dB)	Status
BFU760F Data Sheet			7th	45000	2.8	220	NPN	2400	2	12	0.5	End of Life

Design Resources

Design Files

Quick reference to our design files types.

2 design files

Models
S-parameters BFU760F

ZIPRev 1.0Apr 23, 2019215.1 KBSPAR_BFU760F
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Design Files - miscellaneous
NXP design kit: RF small signal

ZIPRev 2.4May 12, 201618.3 MBNXP_DESIGN_KIT_RF_SMALLSIGNAL
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