BFU520Y | NXP Semiconductors

Dual-NPN Wideband Silicon RF Transistor

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Product Details

Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
  • Maximum stable gain 19 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband differential amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

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Documentation

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7 documents

Compact List

Brochure (1)
Data Sheet (1)
Package Information (1)
Packing Information (1)
Supporting Information (2)
User Guide (1)

Design Files

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5 design files

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