MRFE6VP61K25H Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
600
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
1-TONE
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.15
P1dB (Typ) (dBm)
61
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 600
Efficiency (Typ) (%)
74.6
Peak Power (Typ) (W)
1600
Frequency Band (Hz)
1800000, 600000000
ParameterValue
Description
Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1250 @ CW
P1dB (Typ) (W)
1250
Gain (Typ) (dB)
22.9
Power Gain (Typ) (dB) @ f (MHz)
22.9 @ 230
Frequency (Max) (MHz)
600
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.6
frange [max] (MHz)
600
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.15
Matching
unmatched
Modes of Operation
single-tone modulation

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFE6VP61K25HR5(935314411178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
2932.0
MRFE6VP61K25HR6(935314411128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
2932.0

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MRFE6VP61K25HR5
(935314411178)
No
260
40
MRFE6VP61K25HR6
(935314411128)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFE6VP61K25HR5
(935314411178)
854129
EAR99
MRFE6VP61K25HR6
(935314411128)
854129
EAR99

More about MRFE6VP61K25H

These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.