MRFE6VP61K25GS Product Information|NXP

Features


Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V

Package


CFM4: CFM4, ceramic, flange mount package; 4 terminals; 10.16 mm x 32.26 mm x 4.58 mm body

Buy Options

Operating Features

No information available

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFE6VP61K25GSR5(935311183178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
7528.1

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MRFE6VP61K25GSR5
(935311183178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFE6VP61K25GSR5
(935311183178)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MRFE6VP61K25GSR5
(935311183178)
2025-04-162025-05-26202504008IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about MRFE6VP61K25H

These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.