MMRF1020-04GN Product Information|NXP

Buy Options

Operating Features

ParameterValue
Frequency (Min) (MHz)
720
Frequency (Max) (MHz)
960
Supply Voltage (Typ) (V)
48
ParameterValue
P1dB (Typ) (dBm)
53
P1dB (Typ) (W)
200
Die Technology
LDMOS

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MMRF1020-04GNR3(935318203528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
3064.9

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
MMRF1020-04GNR3
(935318203528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MMRF1020-04GNR3
(935318203528)
854233
EAR99

More about MMRF1020-04N

The MMRF1020-04NR3 and MMRF1020-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistors are also suitable for wideband power amplifier applications from 600 to 1000 MHz and saturated power levels up to 500 watts.