A3T21H360W23S Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
2200
Number of pins
6
Package Style
CFM
Amp Class
AB, C
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB, C
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.21
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2110, 2200
Efficiency (Typ) (%)
52
Peak Power (Typ) (W)
348
Frequency Band (Hz)
2110000000, 2200000000
ParameterValue
Description
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
fi(RF) [min] (MHz)
2110
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
56 @ AVG
Gain (Typ) (dB)
16.4
Power Gain (Typ) (dB) @ f (MHz)
16.4 @ 2110
Frequency (Max) (MHz)
2200
Frequency (Min) (MHz)
2110
Frequency (Min-Max) (GHz)
2.1100001 to 2.2
frange [max] (MHz)
2200
frange [min] (MHz)
2110
Rth(j-a) (K/W)
0.21
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
55.4

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
A3T21H360W23SR6(935354511128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6028.7

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
A3T21H360W23SR6
(935354511128)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
A3T21H360W23SR6
(935354511128)
854233
EAR99

More about A3T21H360W23S

The A3T21H360W23S 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.