A2I09VD050N Product Information|NXP

Features


Airfast RF LDMOS Wideband Integrated Power Amplifier, 575-960 MHz, 6.3 W Avg., 48 V

Package


FM15F: FM15F, plastic, flange mount flat package; 15 terminals; 9.02 mm x 17.53 mm x 2.59 mm body

Buy Options

Operating Features

ParameterValue
Frequency (Min) (MHz)
575
Frequency (Max) (MHz)
960
Supply Voltage (Typ) (V)
48
ParameterValue
Peak Power (Typ) (dBm)
48.3
Peak Power (Typ) (W)
67.6
Die Technology
LDMOS

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
A2I09VD050NR1(935375787528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
1572.1

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
A2I09VD050NR1
(935375787528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
A2I09VD050NR1
(935375787528)
854233
EAR99

More about A2I09VD050N

The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.