A2I09VD015N|575-960 MHz, 2 W Avg, 48 V | NXP Semiconductors

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The A2I09VD015N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

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Data Sheet

Product Details

Features

On-chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation with enable/disable function
Designed for digital predistortion error correction systems
Optimized for Doherty applications
RoHS compliant

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Characterization Performance: V_DD = 48 Vdc, I_DQ1(A+B) = 16 mA, I_DQ2(A+B) = 84 mA, P_out = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
920 MHz	32.9	19.3	–45.9
940 MHz	33.0	19.7	–45.5
960 MHz	32.8	19.6	–44.9

1. All data measured in fixture with device soldered to heatsink.

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Documentation

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1 document

A2I09VD015N 575-960 MHz, 2 W Avg, 48 V Data Sheet[A2I09VD015N]

PDFJun 19, 2018Rev 0

Design Resources

Design Files

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2 design files

Models
A2I09VD015N S-Parameters

S2PRev 0Jun 19, 201817.5 KBA2I09VD015N-SP

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Printed Circuit Boards and Schematics
A2I09VD015N 900 MHz PCB DXF file

ZIPRev 2Jun 19, 2018123.2 KBA2I09VD015N-900-PCB

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575-960 MHz, 2 W Avg., 48 V Airfast®Wideband Integrated RF LDMOS Amplifier

Product Details

Features

RF Performance Table

900 MHz

Buy/Parametrics

Documentation

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Data Sheet (1)

A2I09VD015N 575-960 MHz, 2 W Avg, 48 V Data Sheet[A2I09VD015N]

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Data Sheet (1)

A2I09VD015N 575-960 MHz, 2 W Avg, 48 V Data Sheet[A2I09VD015N]

Design Resources

Design Files

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A2I09VD015N S-Parameters

A2I09VD015N 900 MHz PCB DXF file

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A2I09VD015N S-Parameters

A2I09VD015N 900 MHz PCB DXF file

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575-960 MHz, 2 W Avg., 48 V Airfast^®Wideband Integrated RF LDMOS Amplifier