Product Details

Features

Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

Driver Application - 900 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1(A+B) = 58 mA, I_DQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
920 MHz	36.2	17.5	–48.9
940 MHz	36.2	17.4	–49.5
960 MHz	36.1	17.3	–49.1

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 25 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃ 26 Watts CW

Driver Application - 700 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1(A+B) = 58 mA, I_DQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
728 MHz	36.4	17.2	–48.9
748 MHz	36.4	17.6	–49.7
768 MHz	36.4	17.9	–50.5

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
MD8IC925N Data Sheet			Active	728	960	28	44.9	31	LDMOS

Documentation

Quick reference to our documentation types.

10 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
Effective Small Cell Solutions for MIMO Radios[AN5296]

PDFJan 15, 2017Rev 0
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

MD8IC925N 728-960 MHz, 2.5 W Avg., 28 V Data Sheet[MD8IC925N]

PDFSep 8, 2016Rev 1

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

PDFMar 18, 2016Rev B
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

PDFFeb 26, 2016Rev B

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

PDFMay 15, 2015Rev 0

Design Resources

Design Files

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3 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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MD8IC925N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019790.2 KBMD8IC925N_MDL_ADS

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Calculators
MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0May 30, 201330.7 KBMD8IC925N_MTTF_CALC

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3 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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MD8IC925N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00790.2 KBMD8IC925N_MDL_ADS

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Calculators
MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0May 30, 2013 00:00:0030.7 KBMD8IC925N_MTTF_CALC

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728-960 MHz, 2.5 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

Product Details

Features

RF Performance Tables

Driver Application - 900 MHz

Driver Application - 700 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (6)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

Effective Small Cell Solutions for MIMO Radios[AN5296]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MD8IC925N 728-960 MHz, 2.5 W Avg., 28 V Data Sheet[MD8IC925N]

Package Information (2)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

White Paper (1)

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

Filter by

Application Note (6)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

Effective Small Cell Solutions for MIMO Radios[AN5296]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MD8IC925N 728-960 MHz, 2.5 W Avg., 28 V Data Sheet[MD8IC925N]

Package Information (2)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

White Paper (1)

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MD8IC925N RF High-Power Model ADS Product Model Design Kit

MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

Filter by

Filter By

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MD8IC925N RF High-Power Model ADS Product Model Design Kit

MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

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