MD8IC925N|728-960 MHz, 2.5 W Avg, 28 V | NXP Semiconductors

728-960 MHz, 2.5 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

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Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

Driver Application - 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 25 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 26 Watts CW

Driver Application - 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Buy/Parametrics

1 result

Include 1 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

728

960

28

44.9

31

LDMOS

Documentation

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10 documents

Compact List

Application Note (6)
Data Sheet (1)
Package Information (2)
White Paper (1)

Design Files

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3 design files

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