Application Note (3)
Data Sheet (1)
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A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet[A2I09VD050N]
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575-960 MHz, 6.3 W Avg., 48 V Airfast® Wideband Integrated RF LDMOS Amplifier
The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
TO-270WB-15 and TO-270WBG-15 Package Image
Product Details
Features
- On-chip matching (50 ohm input, DC blocked)
- Integrated quiescent current temperature compensation with enable/disable function
- Designed for digital predistortion error correction systems
- Optimized for Doherty applications
- RoHS compliant
RF Performance Table
900 MHz
Typical Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 74 mA, IDQ2(A+B) = 240 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
PAE (%) |
ACPR (dBc) |
| 920 MHz | 36.8 | 19.7 | –45.5 |
| 940 MHz | 36.8 | 19.9 | –45.9 |
| 960 MHz | 36.6 | 19.8 | –45.8 |
Buy/Parametrics
2 results
Include 0 NRND
Part | Order | CAD Model | Status | Frequency (Min) (MHz) | Frequency (Max) (MHz) | Supply Voltage (Typ) (V) | Peak Power (Typ) (dBm) | Peak Power (Typ) (W) | Die Technology |
|---|---|---|---|---|---|---|---|---|---|
Active | 575 | 960 | 48 | 48.3 | 67.6 | LDMOS | |||
Active | 575 | 960 | 48 | 48.3 | 67.6 | LDMOS |
Documentation
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Compact List
Application Note (3)
Data Sheet (1)
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A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet[A2I09VD050N]
Package Information (2)
Technical Notes (1)
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