AFT31150N|150 W Pulse, 2700-3100 MHz, 32 V

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The AFT31150N RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.

See product image

Data Sheet

Application Notes

Product Details

Features

Characterized with series equivalent large-signal impedance parameters
Internally matched for ease of use
Qualified up to a maximum of 32 V_DD operation
Integrated ESD protection
Greater negative gate-source voltage range for improved Class C operation
Recommended driver: AFIC31025N (25 W)
RoHS Compliant

Commercial S-Band radar systems
Maritime radar
Weather radar

Part numbers include: AFT31150N.

Key Parametrics

Frequency (Min) (MHz)

2700
Frequency (Max) (MHz)

3100
Supply Voltage (Typ) (V)

32
P1dB (Typ) (dBm)

51.8
P1dB (Typ) (W)

150
Die Technology

LDMOS

RF Performance Tables

Typical Performance

In 2700-3100 MHz reference circuit, V_DD = 32 Vdc

Frequency (MHz)	Signal Type	P_out (W)	G_ps (dB)	η_D (%)	IRL (dB)
2700-3100⁽¹⁾	Pulse (300 µsec, 15% Duty Cycle)	150 Peak	17.2	49.0	–6

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_in (W)	Test Voltage	Result
3100⁽²⁾	Pulse (300 µsec, 15% Duty Cycle)	10:1 at all Phase Angles	6.8 Peak (3 dB Overdrive)	32	No Device Degradation

1. The values shown are the center band performance numbers across the indicated frequency range.
2. Measured in 3100 MHz narrowband production test fixture.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

5 documents

^{Data Sheet}
AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet

PDFRev 0May 25, 2017776.5 KBAFT31150NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins

PDFRev DFeb 8, 2019177.8 KBSOT1823-1English

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
AFT31150N S-Parameters

S2PRev 0Aug 3, 2017 00:00:0034.4 KBAFT31150N-SP
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^{Printed Circuit Boards and Schematics}
AFT31150N 3100 MHz Narrowband PCB DXF file

ZIPRev 0May 25, 2017 00:00:0034.1 KBAFT31150N-3100NB-PCB
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^{Printed Circuit Boards and Schematics}
AFT31150N 2700-3100 MHz PCB DXF file

ZIPRev 0May 25, 2017 00:00:0020.9 KBAFT31150N-2700-3100-PCB
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^Calculators
AFT31150N RF Power Electromigration MTTF Calculation Program

XLSXRev 0May 25, 2017 00:00:0071.5 KBAFT31150N_MTTF_CALC
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150 W Pulse over 2700-3100 MHz, 32 V Airfast^® RF Power LDMOS Transistor