MRF6V12250H|275 W Pulse, 960-1215 MHz, 50 V

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MRF6V12250H

RF Power transistors, MRF6V12250HR3 and MRF6V12250HSR3, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications.

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Data Sheet

Application Notes

Product Details

Features

Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 100 mA, Pout = 275 Watts Peak (27.5 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
Power Gain: 20.3 dB
Drain Efficiency: 65.5%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak Power
Typical Broadband Performance: V_DD = 50 Volts, I_DQ = 100 mA, Pout = 250 Watts Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
Power Gain: 19.8 dB
Drain Efficiency: 58%
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

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Documentation

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1-5 of 7 documents

^{Data Sheet}
MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

PDFRev 2Apr 28, 20101.3 MBMRF6V12250HEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^Brochure
RF Solutions for Commercial Aerospace

PDFRev 2Sep 4, 20151.9 MBBR1608English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

PDFRev HMar 22, 201644.1 KBSOT1792-1English
^{Package Information}
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

PDFRev JMar 22, 201643.5 KBSOT1793-1English
^{White Paper}
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications

PDFRev 4Sep 8, 2011965.1 KB50VRFLDMOSWPEnglish

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Design Resources

Design Files

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5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
MRF6V12250H, MRF6V12250HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00334.5 KBMRF6V12250H_MDL_ADS
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RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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MRF6V12250H, MRF6V12250HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:00739.2 KBMRF6V12250H_MDL_AWR
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^Calculators
MRF6V12250HR3, MRF6V12250HSR3 RF Power Electromigration MTTF Calculation Program

XLSRev 1Apr 28, 2010 00:00:0041.0 KBMRF6V12250H_MTTF_CALC
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960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

Product Details

Features

Buy/Parametrics

Documentation

Filter by

MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

RF Solutions for Commercial Aerospace

Using Data Sheet Impedances for RF LDMOS Devices

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications

Design Resources

Design Files

Filter by

MRF6V12250H, MRF6V12250HS RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF6V12250H, MRF6V12250HS RF High-Power Model AWR Product Model Design Kit

MRF6V12250HR3, MRF6V12250HSR3 RF Power Electromigration MTTF Calculation Program

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