MRF6V12250HS Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
1215
Number of pins
2
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.08
P1dB (Typ) (dBm)
54.4
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
960, 1215
Efficiency (Typ) (%)
65.5
Peak Power (Typ) (W)
338
Frequency Band (Hz)
960000000, 1215000000
ParameterValue
Description
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
fi(RF) [min] (MHz)
960
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
275 @ Peak
P1dB (Typ) (W)
275
Gain (Typ) (dB)
20.3
Power Gain (Typ) (dB) @ f (MHz)
20.3 @ 1030
Frequency (Max) (MHz)
1215
Frequency (Min) (MHz)
960
Frequency (Min-Max) (GHz)
0.96000004 to 1.215
frange [max] (MHz)
1215
frange [min] (MHz)
960
Rth(j-a) (K/W)
0.08
Matching
input and output impedance matching
Modes of Operation
pulsed radio frequency signal

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRF6V12250HSR5(935317106178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
4763.0

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MRF6V12250HSR5
(935317106178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRF6V12250HSR5
(935317106178)
854233
EAR99

More about MRF6V12250H

RF Power transistors, MRF6V12250HR3 and MRF6V12250HSR3, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications.