MRFE6VS25GN Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
2000
Number of pins
2
Package Style
DFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.2
P1dB (Typ) (dBm)
44
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 2000
Efficiency (Typ) (%)
74.7
Peak Power (Typ) (W)
35
Frequency Band (Hz)
1800000, 2000000000
ParameterValue
Description
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
25 @ CW
P1dB (Typ) (W)
25
Gain (Typ) (dB)
25.5
Power Gain (Typ) (dB) @ f (MHz)
25.5 @ 512
Frequency (Max) (MHz)
2000
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 2
frange [max] (MHz)
2000
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
1.2
Matching
unmatched
Modes of Operation
continuous wave

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFE6VS25GNR1(935314771528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
548.0

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead SolderingLead SolderingLead Free SolderingLead SolderingLead Free Soldering
MRFE6VS25GNR1
(935314771528)
No
3
260
260
40
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFE6VS25GNR1
(935314771528)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MRFE6VS25GNR1
(935314771528)
2025-04-162025-05-26202504008IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
MRFE6VS25GNR1
(935314771528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about MRFE6VS25N

MRFE6VS25NR1 and MRFE6VS25GNR1 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.