MRFE6VP61K25GN Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
600
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.06
P1dB (Typ) (dBm)
61
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 600
Efficiency (Typ) (%)
72.3
Peak Power (Typ) (W)
1600
Frequency Band (Hz)
1800000, 600000000
ParameterValue
Description
Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1250 @ Peak
P1dB (Typ) (W)
1250
Gain (Typ) (dB)
23
Power Gain (Typ) (dB) @ f (MHz)
23 @ 230
Frequency (Max) (MHz)
600
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.6
frange [max] (MHz)
600
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.06
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFE6VP61K25GNR6(935315986528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
5281.4

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
MRFE6VP61K25GNR6
(935315986528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFE6VP61K25GNR6
(935315986528)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MRFE6VP61K25GNR6
(935315986528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about MRFE6VP61K25N

These high ruggedness devices, MRFE6VP61K25N and MRFE6VP61K25GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.