MRFE6VP61K25GN Product Information|NXP

Features


Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V

Package


FM4: FM4, plastic, flange mount package; 4 terminals; 9.96 mm x 32.26 mm x 3.81 mm body

Buy Options

Operating Features

No information available

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFE6VP61K25GNR6(935315986528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
5281.4

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
MRFE6VP61K25GNR6
(935315986528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFE6VP61K25GNR6
(935315986528)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MRFE6VP61K25GNR6
(935315986528)
2025-04-162025-05-26202504008IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
MRFE6VP61K25GNR6
(935315986528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about MRFE6VP61K25N

These high ruggedness devices, MRFE6VP61K25N and MRFE6VP61K25GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.