MRFE6VP100HS Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
2000
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
1-TONE
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.38
P1dB (Typ) (dBm)
50
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 2000
Efficiency (Typ) (%)
70
Peak Power (Typ) (W)
126
Frequency Band (Hz)
1800000, 2000000000
ParameterValue
Description
Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
100 @ CW
P1dB (Typ) (W)
100
Gain (Typ) (dB)
27.2
Power Gain (Typ) (dB) @ f (MHz)
27.2 @ 512
Frequency (Max) (MHz)
2000
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 2
frange [max] (MHz)
2000
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.38
Matching
unmatched
Modes of Operation
single-tone modulation

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFE6VP100HSR5(935314736178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
4570.3

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MRFE6VP100HSR5
(935314736178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFE6VP100HSR5
(935314736178)
854129
EAR99

More about MRFE6VP100H

MRFE6VP100HR5 and MRFE6VP100HSR5 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.