MRFE6VP100HS Product Information|NXP

Features


Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V

Package


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 20.53 mm x 3.75 mm body

Buy Options

Operating Features

No information available

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFE6VP100HSR5(935314736178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
4570.3

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MRFE6VP100HSR5
(935314736178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFE6VP100HSR5
(935314736178)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MRFE6VP100HSR5
(935314736178)
2025-04-162025-05-26202504008IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about MRFE6VP100H

MRFE6VP100HR5 and MRFE6VP100HSR5 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.