MRF1K50H Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
500
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.12
P1dB (Typ) (dBm)
61.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 500
Efficiency (Typ) (%)
74
Peak Power (Typ) (W)
1700
Frequency Band (Hz)
1800000, 500000000
ParameterValue
Description
Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1500 @ Peak
P1dB (Typ) (W)
1500
Gain (Typ) (dB)
23.7
Power Gain (Typ) (dB) @ f (MHz)
23.7 @ 230
Frequency (Max) (MHz)
500
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.5
frange [max] (MHz)
500
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.12
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRF1K50HR5(935313284178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
2932.0

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MRF1K50HR5
(935313284178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRF1K50HR5
(935313284178)
854129
EAR99

More about MRF1K50H

This high ruggedness device, MRF1K50H, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.