AFT09MS007N Product Information|NXP

Features


Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V

Package


PLD4L: PLD4L, plastic, RF over-molded package designation; 4 terminals; 0 mm pitch; 5.85 mm x 6.61 mm x 1.74 mm body

Buy Options

Operating Features

No information available

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
AFT09MS007NT1(935318254515)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
280.0

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead SolderingLead SolderingLead Free SolderingLead SolderingLead Free Soldering
AFT09MS007NT1
(935318254515)
No
3
260
260
40
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
AFT09MS007NT1
(935318254515)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
AFT09MS007NT1
(935318254515)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
AFT09MS007NT1
(935318254515)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label
AFT09MS007NT1
(935318254515)
2017-12-202018-01-03201710023INew PQ Label Input for Non-MPQ Shipments

More about AFT09MS007N

The AFT09MS007NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common source amplifier applications in handheld radio equipment.