AFSC5G26E39 Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
2690
Number of pins
26
Package Style
HLQFN
Amp Class
AB, C
Test Signal
LTE
Supply Voltage (Typ) (V)
27
Class
AB, C
Die Technology
LDMOS
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2496, 2690
Efficiency (Typ) (%)
41.8
Peak Power (Typ) (W)
51.3
Frequency Band (Hz)
2496000000, 2690000000
ParameterValue
Description
Airfast Power Amplifier Module, 2496-2690 MHz, 30 dB, 8 W Avg.
fi(RF) [min] (MHz)
2496
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
8 @ Avg
Gain (Typ) (dB)
29.6
Power Gain (Typ) (dB) @ f (MHz)
29.6 @ 2600
Frequency (Max) (MHz)
2690
Frequency (Min) (MHz)
2496
Frequency (Min-Max) (GHz)
2.496 to 2.69
frange [max] (MHz)
2690
frange [min] (MHz)
2496
Matching
input and output impedance matching
Modes of Operation
long term evolution (3GPP)
Peak Power (Typ) (dBm)
47.1

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
AFSC5G26E39T2(935400723528)
No
Yes
Certificate Of Analysis (CoA)
Yes
HREACH SVHC
164.5268

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead SolderingLead SolderingLead Free SolderingLead SolderingLead Free Soldering
AFSC5G26E39T2
(935400723528)
No
3
260
260
40
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
AFSC5G26E39T2
(935400723528)
854233
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
AFSC5G26E39T2
(935400723528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
AFSC5G26E39T2
(935400723528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about AFSC5G26E39

The AFSC5G26E39 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low-power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.