Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
Package
HLQFN26: HLQFN26, thermal enhanced low profile quad flat package, no leads, 1 mm pitch, 10 mm x 6 mm x 1.365 mm body
Buy Options
A5M36TG140T2
Active
12NC: 935441207528
Details
Order
Operating Features
| Parameter | Value |
|---|---|
fi(RF) [max] (MHz) | 3800 |
Number of pins | 26 |
Package Style | HLQFN |
Supply Voltage (Typ) (V) | 5, 48 |
Die Technology | GaN, LDMOS |
Security Status | COMPANY PUBLIC |
Frequency (Min-Max) (MHz) | 3300, 3800 |
Peak Power (Typ) (W) | 67.6 |
Frequency Band (Hz) | 3300000000, 3800000000 |
| Parameter | Value |
|---|---|
Peak Power (Typ) (dBm) | 48.3 |
Description | Airfast Power Amplifier Module, 3300-3800 MHz, 32 dB, 9 W Avg |
fi(RF) [min] (MHz) | 3300 |
Frequency (Max) (MHz) | 3800 |
Frequency (Min) (MHz) | 3300 |
Frequency (Min-Max) (GHz) | 3.3000002 to 3.8000002 |
frange [max] (MHz) | 3800 |
frange [min] (MHz) | 3300 |
Environmental
| Part/12NC | PbFree | EU RoHS | Halogen Free | RHF Indicator | REACH SVHC | Weight (mg) |
|---|---|---|---|---|---|---|
A5M36TG140T2(935441207528) | No | Yes Certificate Of Analysis (CoA) | Yes |  | REACH SVHC | 164.5268 |
Quality
| Part/12NC | Safe Assure Functional Safety | Moisture Sensitivity Level (MSL) | Peak Package Body Temperature (PPT) (C°) | Maximum Time at Peak Temperatures (s) | |||
|---|---|---|---|---|---|---|---|
| Lead Soldering | Lead Soldering | Lead Soldering | |||||
A5M36TG140T2 (935441207528) | No | 3 | 260 | 40 | |||
Shipping
| Part/12NC | Harmonized Tariff (US)Disclaimer |
|---|---|
A5M36TG140T2 (935441207528) | 854233 |
More about A5M36TG140
The A5M36TG140 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field−proven LDMOS and GaN−on−SiC power amplifiers are designed for TDD LTE and 5G systems.