A5M36TG240|Airfast Power Amplifier Module | NXP Semiconductors

A5M36TG240: 3400-3800 MHz, 31.8 dB, 9 W Avg. Airfast® Power Amplifier Module

Roll over image to zoom in

Product Details

Features

  • 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude

RF Performance Table

3400–3800 MHz

Typical LTE performance: Pout = 9 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.(1)

Buy/Parametrics

1 result

Include 0 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

3400

3800

5, 48

48.2

66.1

GaN, LDMOS

Documentation

Quick reference to our documentation types.

2 documents

Compact List

Design Files

Quick reference to our design files types.

1 design file

Support

What do you need help with?

Recently viewed products

There are no recently viewed products to display.