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Models
S-parameters BGU8L1
SiGe:C Low Noise Amplifier MMIC for LTE
- This page contains information on a product that is not recommended for new designs.
The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external matching inductor.
The BGU8L1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 14 dB gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity.
The BGU8L1 is optimized for 728 MHz to 960 MHz.
6-Pin Leadless Package
Product Details
Features
- Operating frequency from 728 MHz to 960 MHz
- Noise figure = 0.7 dB
- Gain = 14 dB
- High input 1 dB compression point of -3 dBm
- High in band IP3i of 2 dBm
- Supply voltage 1.5 V to 3.1 V
- Self-shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 4.6 mA
- Power-down mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level of 1
Target Applications
- LNA for LTE reception in smart phones
- Feature phones
- Tablet PCs
- RF front-end modules
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Documentation
Quick reference to our documentation types.
3 documents
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Data Sheet
SiGe:C low-noise amplifier MMIC for LTE
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Application Note
BGU8L1 LTE LNA evaluation board
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Supporting Information
Solderlayout SOT1232