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SiGe:C Low Noise Amplifier MMIC with Bypass Switch for LTE
- This page contains information on a product that is not recommended for new designs.
The LTE3401H is a high-gain low noise amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin thin leadless package.
The LTE3401H delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in frequency division duplex (FDD) systems. When receive signal strength is sufficient, the LTE3401H can be switched off to operate in bypass mode at increased IP3i level and a 1 μA supply current, to lower power consumption. The LTE3401H is internally AC coupled and requires only one external matching inductor.
The LTE3401H is optimized for 1710 MHz to 2690 MHz, but supports 1452 MHz - 1710 MHz as well.
Product Details
Features
- Operating frequency from 1452 MHz to 2690 MHz
- Noise figure = 0.65 dB
- Gain 19.5 dB
- High input 1 dB compression point of -10.5 dBm
- High in band IP3i of +2 dBm
- Bypass switch insertion loss of 2.7 dB
- Supply voltage 1.5 V to 3.1 V
- Integrated RF supply decoupling capacitor
- Optimized performance at a supply current of 13.4 mA
- Bypass mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Requires only one input matching inductor
- Input and Output AC coupled through DC blocking capacitors
- Integrated matching for the output
- ESD protection on all pins
- Low bill of materials (BOM)
- 6 pins leadless package: 1.1 mm x 0.7 mm x 0.37 mm: 0.40 mm pitch
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity Level 1
- LNA for LTE reception in smartphones
- Feature phones
- Tablet PCs
- RF front-end modules
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