Demo Board for BGS8M2 LTE LNA

Roll over image to zoom in

Supported Devices

RF

Legacy RF Low-Medium Power Amplifiers

Features

Key Features

  • The BGS8M2 is optimized for 1805 MHz to 2200 MHz
    • Noise figure (NF) = 0.9 dB
    • Gain 14.4 dB
    • Bypass switch insertion loss of 2.2 dB
    • High input 1 dB compression point of -3.5 dBm
    • High out of band IP3i of 3.5 dBm
    • 180 GHz transit frequency - SiGe:C technology
    • Integrated temperature stabilized bias for easy design

Connectivity

  • Input and output DC decoupled
  • Integrated matching for the output

Power Management

  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low 5.8 mA supply current
  • Power-down mode current consumption < 1 µA
  • Requires only one input matching inductor and one supply decoupling capacitor

Size

  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232

Buy Options

OM17006-Image

Click to expand

  • OM17006

  • Demoboard for BGS8M2 LTE LNA.

  • $160.00 USD
  • For a quantity of 1

Design Files

Quick reference to our design files types.

1 design file

Support

What do you need help with?