BGS8L2 LTE LNA with Bypass Switch Evaluation Board

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Supported Devices

RF

Legacy RF Low-Medium Power Amplifiers

Features

Key Features

  • Noise figure (NF) = 0.9 dB
  • Gain 13 dB
  • Bypass switch insertion loss of 1.9 dB
  • High input 1 dB compression point of -1 dBm
  • High out of band IP3i of 1.5 dBm
  • Integrated temperature stabilized bias for easy design
  • Integrated matching for the output
  • 180 GHz transit frequency - SiGe:C technology

Power Management

  • The BGS8L2 is optimized for 728 MHz to 960 MHz
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low 5.2 mA supply current
  • Power-down mode current consumption < 1 µA
  • ESD protection on all pins (HBM > 2 kV)
  • Input and output DC decoupled

Size

  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232

Buy Options

OM17005-Image

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  • OM17005

  • BGS8L2 LTE LNA with bypass switch evaluation board.

  • $160.00 USD
  • For a quantity of 1
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Design Files

Quick reference to our design files types.

1 design file

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