A2I09VD050N|575-960 MHz, 6.3 W Avg, 48 V | NXP Semiconductors

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Technologies

575-960 MHz, 6.3 W Avg., 48 V Airfast® Wideband Integrated RF LDMOS Amplifier

A2I09VD050N Active
The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

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Product Details

Features

  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 74 mA, IDQ2(A+B) = 240 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
920 MHz36.819.7–45.5
940 MHz36.819.9–45.9
960 MHz36.619.8–45.8
1. All data measured in fixture with device soldered to heatsink.

Buy/Parametrics

2 results

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Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

A2I09VD050GN
Data Sheet

Active

575

960

48

48.3

67.6

LDMOS

A2I09VD050N
Data Sheet

Active

575

960

48

48.3

67.6

LDMOS

N true 0 PSPA2I09VD050Nen 7 Application Note Application Note t789 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations 1538705978411713532657 PSP 321.1 KB None None documents None 1538705978411713532657 /docs/en/data-sheet/A2I09VD050N.pdf 321147 /docs/en/data-sheet/A2I09VD050N.pdf A2I09VD050N documents N N 2018-10-04 A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2I09VD050N.pdf /docs/en/data-sheet/A2I09VD050N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Sep 26, 2018 980000996212993340 Data Sheet Y N A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet Application Note Application Note 3 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 3 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 4 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 Technical Notes Technical Notes 1 5 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 6 A English 1410552037358735230752 PSP 84.9 KB None None documents None 1410552037358735230752 /docs/en/package-information/98ASA00684D.pdf 84904 /docs/en/package-information/98ASA00684D.pdf SOT1722-3 documents N N 2016-10-31 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins /docs/en/package-information/98ASA00684D.pdf /docs/en/package-information/98ASA00684D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 11, 2016 302435339416912908 Package Information D N 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins 7 A English 1410552033577709421195 PSP 80.2 KB None None documents None 1410552033577709421195 /docs/en/package-information/98ASA00630D.pdf 80216 /docs/en/package-information/98ASA00630D.pdf SOT1722-1 documents N N 2016-10-31 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins /docs/en/package-information/98ASA00630D.pdf /docs/en/package-information/98ASA00630D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins false 0 A2I09VD050N downloads en true 1 Y PSP Application Note 3 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 3 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 4 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 Data Sheet 1 /docs/en/data-sheet/A2I09VD050N.pdf 2018-10-04 1538705978411713532657 PSP 1 Sep 26, 2018 Data Sheet A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations None /docs/en/data-sheet/A2I09VD050N.pdf English documents 321147 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2I09VD050N.pdf A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2I09VD050N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet 321.1 KB A2I09VD050N N 1538705978411713532657 Package Information 2 /docs/en/package-information/98ASA00684D.pdf 2016-10-31 1410552037358735230752 PSP 6 Mar 11, 2016 Package Information None /docs/en/package-information/98ASA00684D.pdf English documents 84904 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00684D.pdf 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins /docs/en/package-information/98ASA00684D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins 84.9 KB SOT1722-3 N 1410552037358735230752 /docs/en/package-information/98ASA00630D.pdf 2016-10-31 1410552033577709421195 PSP 7 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00630D.pdf English documents 80216 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00630D.pdf 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins /docs/en/package-information/98ASA00630D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins 80.2 KB SOT1722-1 N 1410552033577709421195 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 5 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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