MD8IC925N|728-960 MHz, 2.5 W Avg, 28 V

Product Details

Features

Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

Part numbers include: MD8IC925GN, MD8IC925N.

RF Performance Tables

Driver Application - 900 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1(A+B) = 58 mA, I_DQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
920 MHz	36.2	17.5	–48.9
940 MHz	36.2	17.4	–49.5
960 MHz	36.1	17.3	–49.1

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 25 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃ 26 Watts CW

Driver Application - 700 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1(A+B) = 58 mA, I_DQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
728 MHz	36.4	17.2	–48.9
748 MHz	36.4	17.6	–49.7
768 MHz	36.4	17.9	–50.5

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

1-5 of 10 documents

^{Data Sheet}
MD8IC925N 728-960 MHz, 2.5 W Avg., 28 V Data Sheet

PDFRev 1Sep 8, 2016827.0 KBMD8IC925NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
Effective Small Cell Solutions for MIMO Radios

PDFRev 0Jan 15, 2017273.2 KBAN5296English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^{Application Note}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
^{Application Note}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
^{Package Information}
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins

PDFRev BMar 18, 201672.7 KBSOT1720-2English
^{Package Information}
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins

PDFRev BFeb 26, 201677.4 KBSOT1720-3English
^{White Paper}
Advances in Airfast RFICs White Paper

PDFRev 0May 15, 2015167.4 KBAIRFASTWBFWPEnglish

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Design Resources

Design Files

Quick reference to our design files types.

3 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
MD8IC925N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00790.2 KBMD8IC925N_MDL_ADS
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^Calculators
MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0May 30, 2013 00:00:0030.7 KBMD8IC925N_MTTF_CALC
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728-960 MHz, 2.5 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers