MRF6V12500H|500 W Pulse, 960-1215 MHz, 50 V | NXP Semiconductors

960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors

  • This page contains information on a product that is not recommended for new designs.

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Product Details

Features

  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant

RF Performance Table

Typical Pulse Performance

VDD = 50 Volts, IDQ = 200 mA 1. Minimum output power for each specified pulse condition.
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power

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Status

Not Recommended for New Designs

Not Recommended for New Designs

Not Recommended for New Designs

Documentation

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9 documents

Compact List

Application Note (2)
Brochure (1)
Data Sheet (1)
Package Information (3)
Technical Notes (1)
White Paper (1)

Design Resources

Design Files

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5 design files

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