MRFX1K80N Product Information|NXP

Features


Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V

Package


FM4F: FM4F, plastic, flange mount flat package; 4 terminals; 9.96 mm x 32.26 mm x 3.81 mm body

Buy Options

Operating Features

ParameterValue
fi(RF) [max] (MHz)
400
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
65
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.06
P1dB (Typ) (dBm)
62.6
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 400
Efficiency (Typ) (%)
75.7
Frequency Band (Hz)
1800000, 400000000
ParameterValue
Description
Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
fi(RF) [min] (MHz)
1.8
P1dB (Typ) (W)
1800
Gain (Typ) (dB)
24.4
Power Gain (Typ) (dB) @ f (MHz)
24.4 @ 230
Frequency (Max) (MHz)
400
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.4
frange [max] (MHz)
400
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.06
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFX1K80NR5(935362678578)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
5282.22

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
MRFX1K80NR5
(935362678578)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFX1K80NR5
(935362678578)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MRFX1K80NR5
(935362678578)
2025-04-162025-05-26202504008IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
MRFX1K80NR5
(935362678578)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about MRFX1K80N

The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.