MRFX035H Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
512
Number of pins
2
Package Style
CFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
65
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.3
P1dB (Typ) (dBm)
45.4
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 512
Efficiency (Typ) (%)
75.8
Frequency Band (Hz)
1800000, 512000000
ParameterValue
Description
Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
fi(RF) [min] (MHz)
1.8
P1dB (Typ) (W)
35
Gain (Typ) (dB)
24.8
Power Gain (Typ) (dB) @ f (MHz)
24.8 @ 230
Frequency (Max) (MHz)
512
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.512
frange [max] (MHz)
512
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
1.3
Matching
unmatched
Modes of Operation
continuous wave

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
MRFX035HR5(935376627178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
2937.8

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MRFX035HR5
(935376627178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRFX035HR5
(935376627178)
854129
EAR99

More about MRFX035H

The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 512 MHz.